PRODUCTION ION IMPLANTATION *Standard Processing: Fabless, ion implanter-less or additionnal production capacity without CapEx heavy investment *Back-up: Breakdown, temporary overlay, wafer size upgrade… R&D IMPLANTATION *Specific processes: product development, test & evaluation *Various substrates, shapes *Exotic species *Heated/cooled, various angles… SIC IMPLANTATION *From -80 °C up to +600 °C implant *From samples to 6” wafer *Si, B, Al, N, C, P and much more *From 5 to 400 keV *Specific SiC ion implant simulations
PULSION® PLASMA IMMERSION ION IMPLANTER
Versatile ion implant process technology for microelectronics, PV & materials engineering • Large process window Ultra Low energy (down to 30eV) High dose implant Tunable 2D and 3D implant mode • Easy process integration Standard PR strip compatibility Reliable dose control Deposition & etching control No energy contamination • Flexible operation Chamber multi-species swap Quick and safe PM Fast seasoning thin wafer, back-side doping possible
FLEXion 200/400 - High Performance Medium Current Ion Implanter
• 200 kV or 400 kV model up to 800kV double charge up to 1.2MeV triple charge • IHC ion source High beam performance Improved multicharging • Extended species capacity 4x 2,2L dopant cylinders 4x neutral auxiliary lines • Up to 218 AMU
IMC200 - Standard & Research Medium Current Ion Implanter
• 200 kV model • up to 400 kV double charge • Multiple ion sources • Manual or automatic loading • Large range of implantations • 60+ species available (Te, Yb, Al…) • GaAs,SiC, InSb, HgCdTe, LiNbO3… • Wide process window • +600°C, -100°C
MBE Effusion cell and other sources
DCA provide all sources including effusion cell, valved cracker and other sources.
We utilize our custom design background in the manufacturing of our standard systems. Our design flexibility is valued by our customers. Many of our standard systems have started as a solution to a customer’s particular deposition process.
The P1000 MBE system is a cluster tool based fully automated production MBE system. The wafer transfer is based on a UHV central distribution chamber (CDC) which allows automatic processing of a batch of 40 (4”) wafers. The CDC has connection ports for a second growth chamber, cassette load lock, UHV storage chamber and high temperature outgassing and hydrogen clean chambers. The P1000 growth chamber has been designed for long growth runs and easy service and maintenance. The growth chamber has a removable source flange. This allows splitting the chamber in to two parts for thorough cleaning of the cryo panels from deposits. The two part cryo panel system has the largest possible area of liquid nitrogen cooled surfaces for efficient group V material pumping.
The R450 MBE is a compact MBE system for substrate sizes up to 3″ in diameter.
Headquarters of Harvest Electronic Technology Co., Ltd in Beijing
