IMC200 - Standard & Research Medium Current Ion Implanter
• 200 kV model
• up to 400 kV double charge
• Multiple ion sources
• Manual or automatic loading
• Large range of implantations
• 60+ species available (Te, Yb, Al…)
• GaAs,SiC, InSb, HgCdTe, LiNbO3…
• Wide process window
• +600°C, -100°C
Classify:
Semiconductor
Functional Overview
• 200 kV model
• up to 400 kV double charge
• Multiple ion sources
• Manual or automatic loading
• Large range of implantations
• 60+ species available (Te, Yb, Al…)
• GaAs,SiC, InSb, HgCdTe, LiNbO3…
• Wide process window
• +600°C, -100°C
Contact us
Tel:
Fax:
010-84195225
E-mail:
Address:
Room 508-510, Building C, Yonghe Mansion, No.28, Andingmen East Street, Dongcheng District, Beijing