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The P600 MBE R&D version is a versatile research MBE system with 12 ports for effusion cells or other sources. The P600 can be equipped with a manually operated linear wafer transfer system or a fully automatic circular central distribution chamber (CDC) transfer system. The P600 growth chamber has a removable source flange. This allows splitting the chamber in to two parts for thorough cleaning of the cryo panels from deposits. The growth chamber has a very extensive cryo panelling with large volume and surface area. This makes it possible to switch quickly from arsenide to phosphide during growth.
The R450 MBE is a compact MBE system for substrate sizes up to 3″ in diameter.
The P1000 MBE system is a cluster tool based fully automated production MBE system. The wafer transfer is based on a UHV central distribution chamber (CDC) which allows automatic processing of a batch of 40 (4”) wafers. The CDC has connection ports for a second growth chamber, cassette load lock, UHV storage chamber and high temperature outgassing and hydrogen clean chambers. The P1000 growth chamber has been designed for long growth runs and easy service and maintenance. The growth chamber has a removable source flange. This allows splitting the chamber in to two parts for thorough cleaning of the cryo panels from deposits. The two part cryo panel system has the largest possible area of liquid nitrogen cooled surfaces for efficient group V material pumping.
We utilize our custom design background in the manufacturing of our standard systems. Our design flexibility is valued by our customers. Many of our standard systems have started as a solution to a customer’s particular deposition process.
DCA provide all sources including effusion cell, valved cracker and other sources.
•     200 kV model •      up to 400 kV double charge •     Multiple ion sources •     Manual or automatic loading •     Large range of implantations •     60+ species available (Te, Yb, Al…) •     GaAs,SiC, InSb, HgCdTe, LiNbO3… •     Wide process window •     +600°C, -100°C
•     200 kV or 400 kV model     up to 800kV double charge     up to 1.2MeV triple charge •     IHC ion source     High beam performance      Improved multicharging •     Extended species capacity     4x 2,2L dopant cylinders     4x neutral auxiliary lines •     Up to 218 AMU
Versatile ion implant process technology for microelectronics, PV & materials engineering   •     Large process window Ultra Low energy (down to 30eV) High dose implant Tunable 2D and 3D implant mode •     Easy process integration Standard PR strip compatibility Reliable dose control Deposition & etching control No energy contamination •     Flexible operation Chamber multi-species swap Quick and safe PM Fast seasoning thin wafer, back-side doping possible
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