· Up to 300mm wafer · Manual Wafer Mounter · Manual Tape Feeding · UV Tape Capability · Auto Linear Tape Rewinding · Manual Tape Cutting · Manual Waste Tape Removal · Manual Wafer & Frame Loading · Manual Mounted Wafer Unloading · Contact or Contactless Chuck · Quick Conversion
*Handle both Coin Stacked Box and Wafer Cassette *Wafer Box and Cassette Wafer Mapping / Scanning *Wafer "Cross Slot" Detection *Automatic Pick Wafer from Coin Stacked Box *Advanced 4-axis Robot Arm, included Motorized Flipper *Vision System Wafer Alignment *Smart Wafer ID Reader *SEC-GEMS Capability
FOSB & FOUP Capability *Vacuum Fork Arm or Beroulli Wafer Arm (Option) *Vision Wafer Alignment *OCR Wafer ID Reader (Option) *Macro Wafer Back Inspection *Integrated to Microscope For Inspection (Option) *Wafer Shipping Box Capability (Option)
PRODUCTION ION IMPLANTATION *Standard Processing: Fabless, ion implanter-less or additionnal production capacity without CapEx heavy investment *Back-up: Breakdown, temporary overlay, wafer size upgrade… R&D IMPLANTATION *Specific processes: product development, test & evaluation *Various substrates, shapes *Exotic species *Heated/cooled, various angles… SIC IMPLANTATION *From -80 °C up to +600 °C implant *From samples to 6” wafer *Si, B, Al, N, C, P and much more *From 5 to 400 keV *Specific SiC ion implant simulations
PULSION® PLASMA IMMERSION ION IMPLANTER
Versatile ion implant process technology for microelectronics, PV & materials engineering • Large process window Ultra Low energy (down to 30eV) High dose implant Tunable 2D and 3D implant mode • Easy process integration Standard PR strip compatibility Reliable dose control Deposition & etching control No energy contamination • Flexible operation Chamber multi-species swap Quick and safe PM Fast seasoning thin wafer, back-side doping possible
FLEXion 200/400 - High Performance Medium Current Ion Implanter
• 200 kV or 400 kV model up to 800kV double charge up to 1.2MeV triple charge • IHC ion source High beam performance Improved multicharging • Extended species capacity 4x 2,2L dopant cylinders 4x neutral auxiliary lines • Up to 218 AMU
IMC200 - Standard & Research Medium Current Ion Implanter
• 200 kV model • up to 400 kV double charge • Multiple ion sources • Manual or automatic loading • Large range of implantations • 60+ species available (Te, Yb, Al…) • GaAs,SiC, InSb, HgCdTe, LiNbO3… • Wide process window • +600°C, -100°C
MBE Effusion cell and other sources
DCA provide all sources including effusion cell, valved cracker and other sources.