PRODUCTION ION IMPLANTATION *Standard Processing: Fabless, ion implanter-less or additionnal production capacity without CapEx heavy investment *Back-up: Breakdown, temporary overlay, wafer size upgrade… R&D IMPLANTATION *Specific processes: product development, test & evaluation *Various substrates, shapes *Exotic species *Heated/cooled, various angles… SIC IMPLANTATION *From -80 °C up to +600 °C implant *From samples to 6” wafer *Si, B, Al, N, C, P and much more *From 5 to 400 keV *Specific SiC ion implant simulations