Ion implantation services
PRODUCTION ION IMPLANTATION
*Standard Processing: Fabless, ion implanter-less or additionnal production capacity without CapEx heavy investment
*Back-up: Breakdown, temporary overlay, wafer size upgrade…
R&D IMPLANTATION
*Specific processes: product development, test & evaluation
*Various substrates, shapes
*Exotic species
*Heated/cooled, various angles…
SIC IMPLANTATION
*From -80 °C up to +600 °C implant
*From samples to 6” wafer
*Si, B, Al, N, C, P and much more
*From 5 to 400 keV
*Specific SiC ion implant simulations
Classify:
Semiconductor
Functional Overview
PRODUCTION ION IMPLANTATION
*Standard Processing: Fabless, ion implanter-less or additionnal production capacity without CapEx heavy investment
*Back-up: Breakdown, temporary overlay, wafer size upgrade…
R&D IMPLANTATION
*Specific processes: product development, test & evaluation
*Various substrates, shapes
*Exotic species
*Heated/cooled, various angles…
SIC IMPLANTATION
*From -80 °C up to +600 °C implant
*From samples to 6” wafer
*Si, B, Al, N, C, P and much more
*From 5 to 400 keV
*Specific SiC ion implant simulations
Contact us
Tel:
Fax:
010-84195225
E-mail:
Address:
Room 508-510, Building C, Yonghe Mansion, No.28, Andingmen East Street, Dongcheng District, Beijing