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Ion implantation services

PRODUCTION ION IMPLANTATION *Standard Processing: Fabless, ion implanter-less or additionnal production capacity without CapEx heavy investment *Back-up: Breakdown, temporary overlay, wafer size upgrade… R&D IMPLANTATION *Specific processes: product development, test & evaluation *Various substrates, shapes *Exotic species *Heated/cooled, various angles… SIC IMPLANTATION *From -80 °C up to +600 °C implant *From samples to 6” wafer *Si, B, Al, N, C, P and much more *From 5 to 400 keV *Specific SiC ion implant simulations

Classify:

Semiconductor

Functional Overview

 PRODUCTION ION IMPLANTATION
*Standard Processing: Fabless, ion implanter-less or additionnal production capacity without CapEx heavy investment
*Back-up: Breakdown, temporary overlay, wafer size upgrade…
R&D IMPLANTATION
*Specific processes: product development, test & evaluation
*Various substrates, shapes
*Exotic species
*Heated/cooled, various angles…
SIC IMPLANTATION
*From -80 °C up to +600 °C implant
*From samples to 6” wafer
*Si, B, Al, N, C, P and much more
*From 5 to 400 keV
*Specific SiC ion implant simulations

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Contact us

Tel:

010-84195588 、010-84195151


Fax:
010-84195225

 

E-mail:

market@harvest.net.cn


Address:

Room 508-510, Building C, Yonghe Mansion, No.28, Andingmen East Street, Dongcheng District, Beijing