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Ion implantation services
Functional Overview
Technical indicators
Installation conditions
PRODUCTION ION IMPLANTATION
*Standard Processing: Fabless, ion implanter-less or additionnal production capacity without CapEx heavy investment
*Back-up: Breakdown, temporary overlay, wafer size upgrade…
R&D IMPLANTATION
*Specific processes: product development, test & evaluation
*Various substrates, shapes
*Exotic species
*Heated/cooled, various angles…
SIC IMPLANTATION
*From -80 °C up to +600 °C implant
*From samples to 6” wafer
*Si, B, Al, N, C, P and much more
*From 5 to 400 keV
*Specific SiC ion implant simulations
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