PULSION® PLASMA IMMERSION ION IMPLANTER
Versatile ion implant process technology
for microelectronics, PV & materials engineering
• Large process window
Ultra Low energy (down to 30eV)
High dose implant
Tunable 2D and 3D implant mode
• Easy process integration
Standard PR strip compatibility
Reliable dose control
Deposition & etching control
No energy contamination
• Flexible operation
Chamber multi-species swap
Quick and safe PM
Fast seasoning
thin wafer, back-side doping possible
Classify:
Semiconductor
Functional Overview
Versatile ion implant process technology
for microelectronics, PV & materials engineering
• Large process window
Ultra Low energy (down to 30eV)
High dose implant
Tunable 2D and 3D implant mode
• Easy process integration
Standard PR strip compatibility
Reliable dose control
Deposition & etching control
No energy contamination
• Flexible operation
Chamber multi-species swap
Quick and safe PM
Fast seasoning
thin wafer, back-side doping possible
Contact us
Tel:
Fax:
010-84195225
E-mail:
Address:
Room 508-510, Building C, Yonghe Mansion, No.28, Andingmen East Street, Dongcheng District, Beijing