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PULSION® PLASMA IMMERSION ION IMPLANTER

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PULSION® PLASMA IMMERSION ION IMPLANTER

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Functional Overview
Technical indicators
Installation conditions
Versatile ion implant process technology 
for microelectronics, PV & materials engineering
 
•     Large process window
Ultra Low energy (down to 30eV)
High dose implant
Tunable 2D and 3D implant mode
•     Easy process integration
Standard PR strip compatibility
Reliable dose control
Deposition & etching control
No energy contamination
•     Flexible operation
Chamber multi-species swap
Quick and safe PM
Fast seasoning
thin wafer, back-side doping possible
Corresponding parameter set not found, please add it in property template of background
Versatile ion implant process technology 
for microelectronics, PV & materials engineering
 
•     Large process window
Ultra Low energy (down to 30eV)
High dose implant
Tunable 2D and 3D implant mode
•     Easy process integration
Standard PR strip compatibility
Reliable dose control
Deposition & etching control
No energy contamination
•     Flexible operation
Chamber multi-species swap
Quick and safe PM
Fast seasoning
thin wafer, back-side doping possible
暂未实现,敬请期待
暂未实现,敬请期待
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Room 508-510, Building C, Yonghe Mansion, No.28, Andingmen East Street, Dongcheng District, Beijing