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PULSION® PLASMA IMMERSION ION IMPLANTER
Functional Overview
Technical indicators
Installation conditions
Versatile ion implant process technology
for microelectronics, PV & materials engineering
• Large process window
Ultra Low energy (down to 30eV)
High dose implant
Tunable 2D and 3D implant mode
• Easy process integration
Standard PR strip compatibility
Reliable dose control
Deposition & etching control
No energy contamination
• Flexible operation
Chamber multi-species swap
Quick and safe PM
Fast seasoning
thin wafer, back-side doping possible
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